PLASMAQUEST: ECR plasma etcher

Description
This system uses CF4, CHF3, O2 and Ar chemistries. It is used extensively to etch SOI and metals as well as various other materials.

This system uses CF4, CHF3, O2 and Ar chemistries. It is used extensively to etch SOI and metals as well as various other materials.
Equipment reservations are made through Bumblebee. Accessing outside of campus? Read this first.